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rf & protection devices data sheet revision 3.0, 2015-07-08 BFP780 200 mw high gain rf driver amplifier
edition 2015-07-08 published by infineon technologies ag 81726 munich, germany ? 2015 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP780 data sheet 3 revision 3.0, 2015-07-08 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet ?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by fl exray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrotec hnique internationale. ir da? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 BFP780, 200 mw high gain rf driver amplifier revision history: 2015-07-08, revision 3.0 page subjects (major cha nges since last revision) final data sheet rev. 3.0 replaces preliminary data sheet rev. 2.0
BFP780 table of contents data sheet 4 revision 3.0, 2015-07-08 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 electrical performance in application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7.1 dc parameter table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7.2 ac parameter tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.3 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 7.4 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 8 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 9 package information sot343-4-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 table of contents
BFP780 list of figures data sheet 5 revision 3.0, 2015-07-08 figure 5-1 absolute maximum power dissipation p diss,max vs. t s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 7-1 BFP780 testing circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 7-2 collector current i c vs. v ce , i b = parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 7-3 dc current gain h fe vs. i c at v ce = 5 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 7-4 collector emitter breakdown voltage bv cer vs. resistor r be . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 7-5 transition frequency f t vs. i c , v ce = parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 7-6 collector base capacitance c cb vs. i c at f = 1 ghz, v ce = parameter . . . . . . . . . . . . . . . . . . . . . 19 figure 7-7 gain g ms , g ma , i s 21 i2 vs. f at v ce = 5 v, i c = 90 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 7-8 maximum power gain g max vs. i c at v ce = 5 v, f = parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 7-9 maximum power gain g max vs. v ce at i c = 90 ma, f = parameter . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 7-10 output reflection coefficient s 22 vs. f at v ce = 5 v, i c = parameter . . . . . . . . . . . . . . . . . . . . . . . 21 figure 7-11 input reflection coefficient s 11 vs. f at v ce = 5 v, i c = parameter . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 7-12 source impedance z sopt for minimum noise figure vs. f at v ce = 5 v, i c = parameter . . . . . . . . . 22 figure 7-13 noise figure nf min vs. f at v ce = 5 v, z s = z sopt , i c = parameter . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 7-14 noise figure nf min vs. i c at v ce = 5 v, z s = z sopt , f = parameter . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 7-15 noise figure nf 50 vs. i c at v ce = 5 v, z s = 50 ? , f = parameter . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 7-16 load pull contour op 1db [dbm] at v ce = 5 v, i c = 90 ma, f = 0.9 ghz, z i = z opt . . . . . . . . . . . . . . 24 figure 7-17 load pull contour oip 3 [dbm] at v ce = 5 v, i c = 90 ma, f = 0.9 ghz, z i = z opt . . . . . . . . . . . . . . 25 figure 7-18 p out , gain, i c , pae vs. p in at v ce = 5 v, f = 0.9 ghz, z i = z opt , r 1 = 270 ? , r 2 = 8 k ? . . . . . . . . . 25 figure 9-1 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 9-2 package footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 9-3 marking example (marking BFP780 : r1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 9-4 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 list of figures
BFP780 list of tables data sheet 6 revision 3.0, 2015-07-08 table 3-1 absolute maximum ratings at t a = 25 c (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . 9 table 4-1 recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5-1 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 6-1 application notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 7-1 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 7-2 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 7-3 ac characteristics, v ce = 5 v, f = 0.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 7-4 ac characteristics, v ce = 5 v, f = 1.8 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 7-5 ac characteristics, v ce = 5 v, f = 2.6 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 7-6 ac characteristics, v ce = 5 v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 list of tables
BFP780 product brief data sheet 7 revision 3.0, 2015-07-08 1 product brief the BFP780 is a single stage 200 mw high gain driver amplifier. the device is not internally matched and hence provides flexibility to be used for any application where high linearity is key. there are several application notes available, most of them for lte frequencies. the device is based on infineon's reliable and cost effective npn silicon germanium technology runni ng in very high volume. the techno logy comprises low ohmic substrate contacts so that emitter bond wires can be omitted. thereby the emitter inductance is minimized and the power gain optimized. the data sheet describes the device mainly at 90 ma collector current ic, operated in class a mode. under these conditions the BFP780 provides 200 mw rf power and high est linearity. if energy efficiency is in the focus it is recommended to operate the device in class ab mode. that means to adjust a quiescent current icq lower than 90 ma and use the self biasing effect to get high linearity and efficiency when the input rf power is high. please refer to figure 7-18, where as an example an icq of 70 ma is adjusted. for the BFP780 a large signal compact model in sgp form at is available. further information please find in chapter 8. the BFP780 is very rugged. the specia l design of the emitter-base diode make s the input robust and yields a high maximum rf input power. the maximum rf input power is 20 dbm (matched condition). the collector design allows safe operation with a single 5 v supply. the chip is housed in a halogen free industry standard package sot343. the high t hermal conductivity of the silicon substrate and the low thermal resistance of the package add up to a therma l resistance of only 95 k/w, what leads to moderate junction te mperatures even at high dissipated dc power values. recommended operating conditions can be found in chapter 4. the proper die attach with good thermal contact is tested 100%, so that there is a minimum variation of thermal propertie s. the devices are 100% dc and rf tested
BFP780 features data sheet 8 revision 3.0, 2015-07-08 2 features applications as ? high linearity driver or pre-driver in the transmit chain ? 2nd or 3rd stage lna in the receive chain ? if or lo buffer amplifier in ? commercial / industrial wireless infrastructure / basestations ? repeaters ? automated test equipment for ? cellular, pcs, dcs, umts, lte, cdma, wcdma, gsm, gprs ? wlan, wimax, wll and mmds ? ism, amr ? uhf television, catv, dbs attention: esd-class 1a (electrostatic discharge) sensitive device, observe handling precautions ? high 3rd order intercept point oip3 of 34.5 dbm @ 5 v, 90 ma ? high compression point op1db of 23 dbm @ 5 v, 90 ma corresponding to 45 % collector efficiency ? low minimum noise figure of 1.2 db @ 900 mhz, 5 v, 30 ma ? single stage, intended for external matching ? high maximum rf input power prfinmax of 20 dbm ? safe operation with single 5 v supply ? 100% test of proper die attach for reproducible thermal contact ? 100% dc and rf tested ? easy to use large signal compact model available ? cost effective npn sige technology running in very high volume ? easy to use pb-free (rohs complia nt) and halogen-free industry standard package sot343, low rthjs of 95 k/w product name package pin configuration marking BFP780 sot343-4-2 1 = b 2 = e 3 = c 4 = e r1s 1 2 3 4
BFP780 absolute maximum ratings data sheet 9 revision 3.0, 2015-07-08 3 absolute maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 3-1 absolute maximum ratings at t a = 25 c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ce 6.1 5.1 v t a = 25 c t a = -40 c collector base voltage v cb 15 v t a = 25 c instantaneous tota l collector current i c ? 240 ma dc + rf swing dc collector current i c ?120ma dc base current i b -1 5 ma rf input power p rfin ? 20 dbm in- and output matched dissipated power p diss ?600mw t s 93c 1) , regard derating curve in figure 5-1 1) t s is the soldering point temperature. t s is measured on the emitter lead at the soldering point of the pcb. junction temperature t j ?150c operating case temperature t a -40 105 2) 2) at the same time regard t j,max . c storage temperature t stg -55 150 c
BFP780 recommended operating conditions data sheet 10 revision 3.0, 2015-07-08 4 recommended operating conditions this following table shows examples of recommended oper ating conditions. as long as maximum ratings are regarded operation outside these conditions is permitted, but increases failure rate and reduces lifetime. for further information refer to the quality repo rt available on the BFP780 internet page. table 4-1 recommended operating conditions operating mode ambient tempera- ture 1) 1) is the operating case temperatur e respectively of the heatsink. collector current dc power 2) 2) p dc = v ce * i c with v ce = 5 v. rf output power 3) 3) rf power delivered to the load , p rfout = * p dc . efficiency 4) 4) efficiency of the conversion from dc power to rf power, = p rfout / p dc (collector efficiency). dissipated power 5) 5) p diss = p dc - p rfout . the rf output power p rfout delivered to the load reduces the power p diss to be dissipated by the device. this means a good output match is recommended. thermal resistance of pcb 6) 6) r thsa is the thermal resistance of the pcb including heat sink, that is between th e soldering point s and the ambient a. regard the impact of r thsa on the junction temperature t j , see below. the thermal design of the pcb, respectively r thsa , has to be adjusted to the intended operating mode. junction tempera- ture 7) 7) t j = t a + p diss * r thja . r thja = r thjs + r thsa . r thja is the thermal resistance between the tr ansistor junction j and the ambient a. r thjs is the combined thermal resistance of die and package, which is 95 k/w for the BFP780 , see chapter 5 . t a [c] i c [ma] p dc [mw] p rfout [mw] (dbm) [%] p diss [mw] r thsa [k/w] t j [c] compression 55 90 450 200 (23) 45 250 120 110 final stage 55 90 450 115 (20.5) 25 340 70 110 high t a 85 50 250 75 (19) 30 175 35 110 maximum t a 105 20 100 45 (16.5) 45 55 35 110 linear 55 50 250 20 (13) 8 230 120 110 very linear 55 90 450 23 (13.5) 5 430 35 110
BFP780 thermal characteristics data sheet 11 revision 3.0, 2015-07-08 5 thermal characteristics figure 5-1 absolute maxi mum power dissipation p diss,max vs. t s note: in the horizontal part of the derating cu rve the maximum power dissipation is given by p diss,max v ce,max * i c,max . in this part the junction temperature t j is lower than t j,max . in the declining slope it is t j = t j,max , p diss,max has to be reduced according to the curve in order not to exceed t j,max . it is t j,max = t s + p diss,max * r thjs . table 5-1 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point r thjs ?95?k/w? 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 t s [c] p diss,max [mw]
BFP780 electrical performance in application data sheet 12 revision 3.0, 2015-07-08 6 electrical performance in application the table shows the most important results of the applic ation notes available for th e BFP780. the matching is approximately 10 db, the isolation is better than 20 db and the stability factor is above 1 at v cc = 5 v. for more detailed informations please refer to the BFP780 internet page. application notes for class ab operating mode respectively lower quiescent currents i cq are in development. table 6-1 application notes application note frequency op1db oip3 gain operating mode i cq # [mhz] [dbm] [dbm] [db] [ma] an410 2600 22 34.7 14.4 class a 80 an390 1805 - 1880 22 34 18 class a 90 an413 900 23 34.7 22 class a 80
BFP780 electrical performance in test fixture data sheet 13 revision 3.0, 2015-07-08 7 electrical performa nce in test fixture 7.1 dc parameter table table 7-1 dc characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 6.1 6.6 ? v i c = 1 ma, open base collector emitter leakage current i ces ?1 1) 0.1 1) accuracy of typcial value limited by the cycle time of the 100% test. 40 3 na a v ce = 8 v, v be = 0 v ce = 18 v, v be = 0 e-b short circuited collector base leakage current i cbo ?1 1) 40 na v cb = 8 v, i e = 0 open emitter emitter base leakage current i ebo ??10a v eb = 0.5 v, i c = 0 open collector dc current gain h fe 85 160 230 v ce = 5 v, i c = 90 ma pulse measured 2) 2) test duration 14 ms, duty cycle 46% . regard that the current gain h fe depends on the junction temperature t j and t j amongst others from the thermal resistance r thsa of the pcb, see notes on table 4-1 . hence the h fe specified in this data sheet must not be the same as in the appl ication. it is recommended to apply circui t design techniques to make the collector current i c independent on the h fe production variation and temperature effects.
BFP780 electrical performance in test fixture data sheet 14 revision 3.0, 2015-07-08 7.2 ac parameter tables table 7-2 general ac characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. transition frequency f t ?20?ghz v ce = 5 v, i c = 90 ma collector base capacitance c cb ?0.37?pf v cb = 5 v, v be = 0 f = 1 mhz emitter grounded collector emitte r capacitance c ce ?1.4?pf v ce = 5 v, v be = 0 f = 1 mhz base grounded emitter base capacitance c eb ?3.3?pf v eb = 0.5 v, v cb = 0 f = 1 mhz collector grounded
BFP780 electrical performance in test fixture data sheet 15 revision 3.0, 2015-07-08 measurement setup for the ac characteristics shown in table 7-3 to table 7-6 is a test fixture with bias t?s and tuners to adjust the source and load impedances in a 50 ? system, t a = 25 c. figure 7-1 BFP780 testing circuit table 7-3 ac characteristics, v ce = 5 v, f = 0.9 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ms ?27? i c = 90 ma transducer gain | s 21 | 2 ?21.5? i c = 90 ma minimum noise figure db z s = z sopt minimum noise figure nf min ?1.2? i c = 30 ma linearity dbm z l = z lopt 1 db compression point at output op1db ?23? i c = 90 ma 3rd order intercept point at output oip3 ?34.5? i c = 90 ma table 7-4 ac characteristics, v ce = 5 v, f = 1.8 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ma ?22? i c = 90 ma transducer gain | s 21 | 2 ?15? i c = 90 ma minimum noise figure db z s = z sopt minimum noise figure nf min ?1.4? i c = 30 ma e input-tuner c b z s output-tuner z l bias-t dut v cc bias-t v bb in out e
BFP780 electrical performance in test fixture data sheet 16 revision 3.0, 2015-07-08 linearity dbm z l = z lopt 1 db compression point at output op1db ?22? i c = 90 ma 3rd order intercept point at output oip 3? 34 ? i c = 90 ma table 7-5 ac characteristics, v ce = 5 v, f = 2.6 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ma ?18? i c = 90 ma transducer gain | s 21 | 2 ?12? i c = 90 ma minimum noise figure db z s = z sopt minimum noise figure nf min ?1.7? i c = 30 ma linearity dbm z l = z lopt 1 db compression point at output op1db ?22? i c = 90 ma 3rd order intercept point at output oip 3? 34 ? i c = 90 ma table 7-6 ac characteristics, v ce = 5 v, f = 3.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ma ?15? i c = 90 ma transducer gain | s 21 | 2 ?8.5? i c = 90 ma minimum noise figure db z s = z sopt minimum noise figure nf min ?2.4? i c =30 ma linearity dbm z l = z lopt 1 db compression point at output op1db ?22? i c = 90 ma 3rd order intercept point at output oip 3? 33.5? i c = 90 ma table 7-4 ac characteristics, v ce = 5 v, f = 1.8 ghz (cont?d) parameter symbol values unit note / test condition min. typ. max.
BFP780 electrical performance in test fixture data sheet 17 revision 3.0, 2015-07-08 7.3 characteristic dc diagrams figure 7-2 collector current i c vs. v ce , i b = parameter note: regard absolute maximum ratings for i c , v ce and p diss figure 7-3 dc current gain h fe vs. i c at v ce = 5 v 0 1 2 3 4 5 6 7 0 20 40 60 80 100 120 140 160 180 v ce [v] i c [ma] 0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 1ma 1.1ma 0.1 1 10 100 1000 10 1 10 2 10 3 i c [ma] h fe
BFP780 electrical performance in test fixture data sheet 18 revision 3.0, 2015-07-08 figure 7-4 collector emitter breakdown voltage bv cer vs. resistor r be note: the above figure shows the co llector-emitter breakdown voltage bv cer with a resistor r be between base and emitter. only for very high r be values ("open base") the breakdown voltage bv cer is as low as bv ceo (here 6.6 v). with decreasing r be values bv cer increases, e.g. at r be = 10 kohm to bv cer = 10 v. in the application the biasing base resistance together with block capacitors take over the function of r be and allows the rf voltage amplitude to swi ng up to voltages much higher than bv ceo , no clipping occurs. due to this effect th e transistor can be biased at v ce = 5 v and still high rf output powers achieved, see the op1db values reported in chapter 7.2 . 10 2 10 3 10 4 10 5 10 6 10 7 6 8 10 12 14 16 18 20 22 24 r be [ohm] bv cer [v] 10 2 10 3 10 4 10 5 10 6 10 7 6 8 10 12 14 16 18 20 22 24 r be [ohm] bv cer [v] r be b c e
BFP780 electrical performance in test fixture data sheet 19 revision 3.0, 2015-07-08 7.4 characteristic ac diagrams figure 7-5 transition frequency f t vs. i c , v ce = parameter figure 7-6 collector base capacitance c cb vs. i c at f = 1 ghz, v ce = parameter 0 20 40 60 80 100 120 140 0 5 10 15 20 25 i c [ma] f t [ghz] 5.00v 4.00v 3.00v 2.00v 0 20 40 60 80 100 120 140 200 300 400 500 600 700 800 i c [ma] c cb [ff] 2.00v 5.00v 4.00v 3.00v
BFP780 electrical performance in test fixture data sheet 20 revision 3.0, 2015-07-08 figure 7-7 gain g ms , g ma , i s 21 i2 vs. f at v ce = 5 v, i c = 90 ma figure 7-8 maximum power gain g max vs. i c at v ce = 5 v, f = parameter 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 f [ghz] g [db] g ms g ma |s 21 | 2 0 20 40 60 80 100 120 140 12 14 16 18 20 22 24 26 28 30 32 i c [ma] g max [db] 0.45ghz 0.90ghz 1.80ghz 2.60ghz 3.50ghz
BFP780 electrical performance in test fixture data sheet 21 revision 3.0, 2015-07-08 figure 7-9 maximum power gain g max vs. v ce at i c = 90 ma, f = parameter figure 7-10 output reflection coefficient s 22 vs. f at v ce = 5 v, i c = parameter 0 1 2 3 4 5 6 12 14 16 18 20 22 24 26 28 30 32 v ce [v] g [db] 3.50ghz 2.60ghz 1.80ghz 0.90ghz 0.45ghz 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 1.0 4.0 0.03 to 12 ghz 2.0 3.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.03 90ma 30ma
BFP780 electrical performance in test fixture data sheet 22 revision 3.0, 2015-07-08 figure 7-11 input refl ection coefficient s 11 vs. f at v ce = 5 v, i c = parameter figure 7-12 source impedance z sopt for minimum noise figure vs. f at v ce = 5 v, i c = parameter 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 2.0 0.03 to 12 ghz 10.0 0.03 1.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 11.0 12.0 0.03 90ma 30ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.5 0.9 1.5 1.8 2.4 3.0 3.5 0.5 0.9 1.5 1.8 2.4 3.0 3.5 0.45 to 4 ghz 0.45 to 4 ghz 30ma 90ma
BFP780 electrical performance in test fixture data sheet 23 revision 3.0, 2015-07-08 figure 7-13 noise figure nf min vs. f at v ce = 5 v, z s = z sopt , i c = parameter figure 7-14 noise figure nf min vs. i c at v ce = 5 v, z s = z sopt , f = parameter 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 f [ghz] nf min [db] i c = 30ma i c = 90ma 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 4 i c [ma] nf min [db] f = 0.45ghz f = 0.9ghz f = 1.5ghz f = 1.8ghz f = 2.6ghz f = 3.5ghz
BFP780 electrical performance in test fixture data sheet 24 revision 3.0, 2015-07-08 figure 7-15 noise figure nf 50 vs. i c at v ce = 5 v, z s = 50 ? , f = parameter figure 7-16 load pull contour op 1db [dbm] at v ce = 5 v, i c = 90 ma, f = 0.9 ghz, z i = z opt 0 20 40 60 80 100 0 1 2 3 4 5 6 i c [ma] nf 50 [db] f = 0.45ghz f = 0.9ghz f = 1.5ghz f = 1.8ghz f = 2.6ghz f = 3.5ghz 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 23 22.6 21.7 20.5 19.6 18.8 17.5 15
BFP780 electrical performance in test fixture data sheet 25 revision 3.0, 2015-07-08 figure 7-17 load pull contour oip 3 [dbm] at v ce = 5 v, i c = 90 ma, f = 0.9 ghz, z i = z opt figure 7-18 p out , gain, i c , pae vs. p in at v ce = 5 v, f = 0.9 ghz, z i = z opt , r 1 = 270 ? , r 2 = 8 k ? note: the curves shown in this chapter have been genera ted using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. t a = 25 c. 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 34.7 34 32.5 31 29.5 27.3 25 20.5 ?20 ?15 ?10 ?5 0 5 10 0 20 40 60 80 100 p in [dbm] gain [db], pout [dbm], pae [%] gain pae pout ic 60 65 70 75 80 85 i c [ma] r 1 r 2 b c e ip1db
BFP780 simulation data data sheet 26 revision 3.0, 2015-07-08 8 simulation data for the spice gummel poon (gp) model as well as for the s-parameters (including noise parameters) please refer to our internet website. please consult our website and download the latest versions before actually starting your design. you find the BFP780 spice gp model in the internet in the section development support / simulation data, from where you can download the circuit simulation data very quickly and conveniently. the model already contains the package parasitics and is ready to use for dc and high fr equency simulations. the terminals of the model circuit correspond to the pin co nfiguration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the BFP780 spice gp model reflects the typical dc- and rf-performance within the limitations which are given by the spice gp model itself. besides the dc characterist ics all s-parameters in magnitude and phase, as well as noise parameters (including nfmin, optimum source impedance and equival ent noise resistance) and intermodulation have been extracted.
BFP780 package information sot343-4-2 data sheet 27 revision 3.0, 2015-07-08 9 package information sot343-4-2 figure 9-1 package outline figure 9-2 package footprint figure 9-3 marking example (marking BFP780: r1s) figure 9-4 tape dimensions sot343-po v08 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 3 2 4 1 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.6 sot343-fp v08 0.8 1.6 1.15 0.9 xys 56 date code (ym) 2005, june type code manufacturer pin 1 sot323-tp v02 0.2 4 2.15 8 2.3 1.1 pin 1
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